Finite-element determination of interconnect track overheatingO'NEILL, A. G.Electronics Letters. 1989, Vol 25, Num 22, pp 1484-1485, issn 0013-5194, 2 p.Article

Defect identification in strained Si/SiGe heterolayers for device applicationsESCOBEDO-COUSIN, E; OLDEN, S. H; O'NEILL, A. G et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 17, issn 0022-3727, 175306.1-175306.6Article

Nanomechanical Testing : Obtaining mechanical parameters for metallisation stress sensor design using nanoindentationSOARE, S; BULL, S. J; OILA, A et al.Zeitschrift für Metallkunde. 2005, Vol 96, Num 11, pp 1262-1266, issn 0044-3093, 5 p.Conference Paper

Evaluation of strained Si/SiGe material for high performance CMOSOLSEN, S. H; O'NEILL, A. G; CHATTOPADHYAY, S et al.Semiconductor science and technology. 2004, Vol 19, Num 6, pp 707-714, issn 0268-1242, 8 p.Article

High temperature operation of GaAs based FETsWILSON, C. D; O'NEILL, A. G.Solid-state electronics. 1995, Vol 38, Num 2, pp 339-343, issn 0038-1101Article

Device applications of interband tunneling structures with one, two, and three dimensionsGILMAN, J. M. A; O'NEILL, A. G.Journal of applied physics. 1993, Vol 74, Num 1, pp 351-358, issn 0021-8979Article

The use of Raman spectroscopy to identify strain and strain relaxation in strained Si/SiGe structuresDOBROSZ, P; BULL, S. J; OLSEN, S. H et al.Surface & coatings technology. 2005, Vol 200, Num 5-6, pp 1755-1760, issn 0257-8972, 6 p.Conference Paper

Step bunching fabrication constraints in silicon carbidePHELPS, G. J; WRIGHT, N. G; CHESTER, E. G et al.Semiconductor science and technology. 2002, Vol 17, Num 5, pp L17-L21, issn 0268-1242Article

Recent progress and current issues in SiC semiconductor devices for power applicationsJOHNSON, C. M; WRIGHT, N. G; O'NEILL, A. G et al.IEE proceedings. Circuits, devices and systems. 2001, Vol 148, Num 2, pp 101-108, issn 1350-2409Conference Paper

Sub-micron strained Si:SiGe heterostructure MOSFETsCLIFTON, P. A; LAVELLE, S. J; O'NEILL, A. G et al.Microelectronics journal. 1997, Vol 28, Num 6-7, pp 691-701, issn 0959-8324Article

A new version of crystal field theory and its application to ZnSe=CoO'NEILL, A. G; ALLEN, J. W.Solid state communications. 1983, Vol 46, Num 11, pp 833-836, issn 0038-1098Article

The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETsALATISE, O. M; KWA, K. S. K; OLSEN, S. H et al.Solid-state electronics. 2010, Vol 54, Num 3, pp 327-335, issn 0038-1101, 9 p.Article

Structural pattern formation in titanium-nickel contacts on silicon carbide following high-temperature annealingNIKITINA, I. P; VASSILEVSKI, K. V; HORSFALL, A. B et al.Semiconductor science and technology. 2006, Vol 21, Num 7, pp 898-905, issn 0268-1242, 8 p.Article

Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diodeSAHA, A. R; DIMITRIU, C. B; HORSFALL, A. B et al.Applied surface science. 2006, Vol 252, Num 11, pp 3933-3937, issn 0169-4332, 5 p.Conference Paper

Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performanceOLSEN, S. H; O'NEILL, A. G; NORRIS, D. J et al.Semiconductor science and technology. 2002, Vol 17, Num 7, pp 655-661, issn 0268-1242Article

Diffusion of delta doped boron in silicon following oxidationO'NEILL, A. G; BARLOW, R. D; BISWAS, R. G et al.Electronics Letters. 1993, Vol 29, Num 3, pp 263-264, issn 0013-5194Article

Delta doped tunnel diode : a new negative differential resistance deviceGILMAN, J. M. A; O'NEILL, A. G.Electronics Letters. 1990, Vol 26, Num 9, pp 601-602, issn 0013-5194, 2 p.Article

1/f noise study on strained Si_0.8Ge_0.2 p-channel MOSFETs with high-k/poly Si gate stackYAN, L; SIMOEN, E; OLSEN, S. H et al.Solid-state electronics. 2009, Vol 53, Num 11, pp 1177-1182, issn 0038-1101, 6 p.Article

Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H-SiCNIKITINA, I; VASSILEVSKI, K; HORSFALL, A et al.Semiconductor science and technology. 2009, Vol 24, Num 5, issn 0268-1242, 055006.1-055006.8Article

A NEMS-based sensor to monitor stress in deep sub-micron Cu/Low-k interconnectsWILSON, C. J; CROES, K; VAN CAUWENBERGHE, M et al.Semiconductor science and technology. 2009, Vol 24, Num 11, issn 0268-1242, 115018.1-115018.8Article

Device processing and characterisation of high temperature silicon carbide Schottky diodesVASSILEVSKI, K. V; NIKITINA, I. P; WRIGHT, N. G et al.Microelectronic engineering. 2006, Vol 83, Num 1, pp 150-154, issn 0167-9317, 5 p.Conference Paper

Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealingVASSILEVSKI, K. V; WRIGHT, N. G; NIKITINA, I. P et al.Semiconductor science and technology. 2005, Vol 20, Num 3, pp 271-278, issn 0268-1242, 8 p.Article

Quantitative analysis of gate-oxide interface roughening in SiGe/Si virtual substrate-based transistor device structuresNORRIS, D. J; CULLIS, A. G; OLSEN, S. H et al.Thin solid films. 2005, Vol 474, Num 1-2, pp 154-158, issn 0040-6090, 5 p.Article

Quantum modelling of I-V characteristics for 4H-SiC Schottky barrier diodesBLASCIUC-DIMITRIU, C; HORSFALL, A. B; WRIGHT, N. G et al.Semiconductor science and technology. 2005, Vol 20, Num 1, pp 10-15, issn 0268-1242, 6 p.Article

Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopyDOBROSZ, P; BULL, S. J; OLSEN, S. H et al.Zeitschrift für Metallkunde. 2004, Vol 95, Num 5, pp 340-344, issn 0044-3093, 5 p.Conference Paper